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Disambiguation of "Rodwell, Mark J. W."

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First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors.

, , , , , , and . DRC, page 105-106. IEEE, (2019)

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Other publications of authors with the same name

First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors., , , , , , and . DRC, page 105-106. IEEE, (2019)A Design Framework for All-Digital mmWave Massive MIMO With per-Antenna Nonlinearities., , , , and . IEEE Trans. Wirel. Commun., 20 (9): 5689-5701 (2021)A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology., , , and . BCICTS, page 191-194. IEEE, (2022)100-300GHz Wireless: ICs, Arrays, and Systems., , , , , , and . BCICTS, page 1-4. IEEE, (2021)A chip-scale heterodyne optical phase-locked loop with low-power consumption., , , , , , , and . OFC, page 1-3. IEEE, (2017)Dynamic Range Requirements of Digital vs. RF and Tiled Beamforming in mm-Wave Massive MIMO., , , and . RWS, page 46-48. IEEE, (2021)Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers., , , , , and . DRC, page 1-2. IEEE, (2018)A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines., , , , , , and . ISSCC, page 484-485. IEEE, (2009)$W_e=100nm$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1Ømega-\mum^2$ Base Contact Resistivity., , and . DRC, page 179-180. IEEE, (2019)48-GHz digital ICs and 85-GHz baseband amplifiers using transferred-substrate HBT's., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 34 (9): 1196-1203 (1999)