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Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy, , , , , , , and . Appl.~Phys.~Lett., (2000)Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures, , , , , , , , , and 1 other author(s). Journal of Electronic Materials, 28 (5): 486 (1999)Capacitance-voltage characteristics of InAs/GaAs quantum dots embedded in a $pn$ structure, , , , , and . Appl.~Phys.~Lett., (2000)Zur Veröffentlichung eingereicht., , , , and . Phys.~Rev.~B, (2002)Electron Emission from InAs Quantum Dots, , , , and . Proc. 24th International Conference on the Physics of Semiconductors (ICPS-24), Jerusalem 1998, page 1339. Singapore, World Scientific, (1998)Hole and electron emission from InAs quantum dots, , , , , , , , and . Appl.~Phys.~Lett., (2000)Untersuchung von Quantenpunkt-Energieniveaus mit Kapazitätsspektroskopie, , , , and . (2000)DPG-Frühjahrstagung Regensburg.Capacitance-voltage spectroscopy of self-organized InAs/GaAs quantum dots embedded in a pn diode, , , , , and . phys.~status solidi (b), (2001)Capacitance--voltage characteristics of self-organized quantum dots embedded in a pn junction, , , , , and . Proc. 25th International Conference on the Physics of Semiconductors (ICPS-25), Osaka 2000, page 1093. Berlin, Springer, (2001)Electron escape from InAs quantum dots, , , , , , , and . Phys.~Rev.~B, (1999)