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Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET., , , , , , , , и . ESSDERC, стр. 209-212. IEEE, (2012)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 144-147. IEEE, (2017)Intermediate BEOL process influence on power and performance for 3DVLSI., , , , , , , и . 3DIC, стр. TS1.3.1-TS1.3.5. IEEE, (2015)32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit., , , , , , , , , и 4 other автор(ы). ISCAS, стр. 1703-1706. IEEE, (2010)FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration., , , , , , , , , и 6 other автор(ы). ESSDERC, стр. 110-113. IEEE, (2014)Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization., , , , , , , , , и 6 other автор(ы). ESSDERC, стр. 266-269. IEEE, (2015)Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells., , , , , , , , , и 2 other автор(ы). ISVLSI, стр. 539-544. IEEE Computer Society, (2017)Recent advances in 3D VLSI integration., , , , , , , , , и 7 other автор(ы). ICICDT, стр. 1-4. IEEE, (2016)Novel back-biased UTBB lateral SCR for FDSOI ESD protections., , , , , и . ESSDERC, стр. 222-225. IEEE, (2013)Opportunities brought by sequential 3D CoolCube™ integration., , , , , , , , , и 11 other автор(ы). ESSDERC, стр. 226-229. IEEE, (2016)