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Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application.

, , , , , , , and . IRPS, page 1-4. IEEE, (2022)

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Trap Density Modulation for IO FinFET NBTI Improvement., , , , , , , , , and 5 other author(s). IRPS, page 1-5. IEEE, (2020)Polarity Dependency of MOL-TDDB in FinFET., , , , , , , , , and 2 other author(s). IRPS, page 1-3. IEEE, (2023)Reverse Body Bias Dependence of HCI Reliability in Advanced FinFET., , , , , , and . IRPS, page 58-1. IEEE, (2022)A Systematic Study of HCI Improvement in FinFET with Source/Drain Implant and Geometry Modulation., , , , , , , , , and 6 other author(s). IRPS, page 5. IEEE, (2024)Impacts of Post-Cu CMP Queue Time on Reliability., , , , , , , , , and 4 other author(s). IRPS, page 1-5. IEEE, (2024)Impact of Barrier Metal Thickness on SRAM Reliability., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2023)Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application., , , , , , , and . IRPS, page 1-4. IEEE, (2022)Systematic Study of Process Impact on FinFET Reliability., , , , , , , , , and 5 other author(s). IRPS, page 1-5. IEEE, (2021)