Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Microscopic scale characterization and modeling of transistor degradation under HC stress., , , , , , , and . Microelectron. Reliab., 52 (11): 2513-2520 (2012)Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation., , , , , , , , , and . ESSDERC, page 341-344. IEEE, (2014)Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application., , , , , , , , , and 13 other author(s). ESSDERC, page 78-81. IEEE, (2018)Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices., , , , , , , , , and 3 other author(s). IRPS, page 1-4. IEEE, (2021)22FDX® fMAX Optimization through Parasitics Reduction and GM Boost., , , , , , , , , and 8 other author(s). ESSDERC, page 166-169. IEEE, (2019)Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance., , , , , , , , , and 2 other author(s). IRPS, page 59-1. IEEE, (2022)Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias., , , , , , , , and . IRPS, page 1-5. IEEE, (2019)Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology., , , , , , , and . IRPS, page 1-4. IEEE, (2020)RTN and LFN Noise Performance in Advanced FDSOI Technology., , , , , , , , , and 2 other author(s). ESSDERC, page 254-257. IEEE, (2018)