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Towards scalable silicon quantum computing.

, , , , , , , , , , , , , , , , и . DRC, стр. 1-2. IEEE, (2018)

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Bernd Niquet

Marcel Niquet

Georgios Yannis

Christos Yannissis

Franz Niquet

 

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Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , и . ESSDERC, стр. 210-213. IEEE, (2015)MOS technology for quantum computing: recent progress and perspectives for scaling up., , , , , , , , , и 3 other автор(ы). DRC, стр. 1-2. IEEE, (2021)SOI CMOS technology for quantum information processing., , , , , , , , , и 5 other автор(ы). ICICDT, стр. 1-4. IEEE, (2017)Si MOS technology for spin-based quantum computing., , , , , , , , , и 7 other автор(ы). ESSDERC, стр. 12-17. IEEE, (2018)The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 147-150. IEEE, (2013)Towards scalable silicon quantum computing., , , , , , , , , и 7 other автор(ы). DRC, стр. 1-2. IEEE, (2018)Transport properties of strained silicon nanowires., , , , и . ESSDERC, стр. 290-293. IEEE, (2012)A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD., , , , , , , и . ESSDERC, стр. 424-427. IEEE, (2016)Specificities of linear Si QD arrays integration and characterization., , , , , , , , , и 11 other автор(ы). VLSI Technology and Circuits, стр. 415-416. IEEE, (2022)