From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS., , , , и . ISSCC, стр. 428-429. IEEE, (2010)F5: Advanced optical communication: From devices, circuits, and architectures to algorithms., , , , , и . ISSCC, стр. 514-516. IEEE, (2018)80 GHz low noise amplifiers in 65nm CMOS SOI., , , , , , , и . ESSCIRC, стр. 348-351. IEEE, (2007)Design for millimeter-wave applications in silicon technologies., , , , , , , , , и 3 other автор(ы). ESSCIRC, стр. 464-471. IEEE, (2007)Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?, , , , , , , и . ESSDERC, стр. 109-112. IEEE, (2023)Session 21 overview: Extending silicon and its applications: Technology directions subcommittee., , и . ISSCC, стр. 342-343. IEEE, (2018)17.8 A compact 130GHz fully packaged point-to-point wireless system with 3D-printed 26dBi lens antenna achieving 12.5Gb/s at 1.55pJ/b/m., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 306-307. IEEE, (2017)Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications., , , , , , , и . RWS, стр. 337-340. IEEE, (2020)30 dBm P1dB and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology., , , , , , , и . RWS, стр. 73-75. IEEE, (2013)Session 12 Overview: Innovations in Low-Power and Secure IoT Technology Directions Subcommittee., , и . ISSCC, стр. 198-199. IEEE, (2021)