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Thread Control Mechanism for Multithreading Processor., , и . CDES, стр. 81-87. CSREA Press, (2010)1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS., , , , , , , , , и 6 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor., , , , , , , , , и 8 other автор(ы). VLSIC, стр. 1-2. IEEE, (2014)The Fuce processor: The Execution Model and The Programming Methodologies., , , и . PDPTA, стр. 485-491. CSREA Press, (2006)Micro Short-Circuit Detector Including S/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 204-206. IEEE, (2019)Soft- and Hard-Error Radiation Reliability of 228 KB $3T+1C$ Oxide Semiconductor Memory., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-6. IEEE, (2023)UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems., , , , , , , , , и 9 other автор(ы). ISSCC, стр. 574-575. IEEE, (2007)Fuce: the continuation-based multithreading processor., , , , и . Conf. Computing Frontiers, стр. 213-224. ACM, (2007)Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM., , , , , , , , , и 6 other автор(ы). IMW, стр. 1-4. IEEE, (2024)16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 1-3. IEEE, (2015)