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Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation., и . ESSDERC, стр. 215-218. IEEE, (2021)State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors., , , , , , , и . MIPRO, стр. 1-8. IEEE, (2015)Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs.. University of Udine, Italy, (2016)Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation., и . CoRR, (2022)Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies., , , , , и . CoRR, (2021)On the optimization of SiGe and III-V compound hetero-junction Tunnel FET devices., , , , и . ESSDERC, стр. 49-52. IEEE, (2013)Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects., , и . ESSDERC, стр. 344-347. IEEE, (2022)Improved surface roughness modeling and mobility projections in thin film MOSFETs., , , , , и . ESSDERC, стр. 306-309. IEEE, (2015)A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs., , , , и . ESSDERC, стр. 322-325. IEEE, (2012)Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 340-343. IEEE, (2022)