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Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs.

, , , , , and . ICECS, page 953-956. IEEE, (2012)

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Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs., , , , , and . ICECS, page 953-956. IEEE, (2012)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , and . ESSDERC, page 142-145. IEEE, (2016)A threshold voltage variation cancellation technique for analogue peripheral circuits of a display array using poly-Si TFTs., , , , , and . ISCAS, IEEE, (2006)Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors., , , , , , and . Microelectron. Reliab., 45 (2): 341-348 (2005)Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress., , , , , , and . Microelectron. Reliab., 48 (4): 531-536 (2008)Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors., , , , and . Microelectron. Reliab., 46 (12): 2032-2037 (2006)Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region., , , , and . ISCAS, IEEE, (2006)Variability of nanoscale triple gate FinFETs: Prediction and analysis method., , , , , and . ICECS, page 710-713. IEEE, (2014)Effects of hot carriers in offset gated polysilicon thin-film transistors., , , , and . Microelectron. Reliab., 46 (2-4): 311-316 (2006)