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A D-band 1-channel Beamforming Transmitter Integrated Circuits for 6G mobile communication.

, , , , , , , , , и . ICTC, стр. 1152-1153. IEEE, (2023)

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Dong-Hui Zhou

Hsun-Hui Lee

Dong-Ki Lee

Dong Su Lee

Dong-Seup Lee

 

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A Temperature-Independent Transmitter IC for 5.8-GHz DSRC Applications., , , и . IEEE Trans. Circuits Syst. I Regul. Pap., 55-I (6): 1733-1741 (2008)1.8V-to-1.0V CMOS 65 nm MIPI RFFE Interface Circuit for Millimeter-wave Beamforming Array., , , , , и . ICACT, стр. 120-123. IEEE, (2019)Sub-THz Transmitter Radio Integrated Circuits for Super high-speed 6G Mobile Communications., , , , , и . ICTC, стр. 769-772. IEEE, (2023)Implementation of Single Chip 28 GHz SPDT Switch-less Front-end Circuits in a 65nm CMOS process., , , , , и . ICTC, стр. 1814-1816. IEEE, (2023)A 2.9-GHz LC-VCO based PLL with a fast automatic frequency control., , , и . ISWCS, стр. 860-864. IEEE, (2012)A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications., , , , , и . ISOCC, стр. 376-377. IEEE, (2022)Implementation of 1.8V MIPI RFFE slave controller in CMOS 180nm process for 5V RF front-end modules., , , , , и . ICTC, стр. 2071-2073. IEEE, (2022)Transceiver Design Technology for Full Digital DS-UWB Applications., , , , , , , и . VTC Fall, стр. 1-4. IEEE, (2006)A linear InGaP/GaAs HBT power amplifier for LTE B7 applications., , , , , , и . ISOCC, стр. 234-235. IEEE, (2017)A 28-GHz 28.5-dBm power amplifier using 0.15-µm InGaAs E-mode pHEMT technology., , , , , и . ISOCC, стр. 257-258. IEEE, (2018)