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Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI.

, , , , , and . IRPS, page 3. IEEE, (2015)

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A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory., , and . IRPS, page 1-6. IEEE, (2023)Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs., , , , , , and . IRPS, page 1-8. IEEE, (2021)Hot Carrier Degradation in Cryo-CMOS., , , and . IRPS, page 1-5. IEEE, (2020)Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories., , , , , , , and . IMW, page 1-4. IEEE, (2024)Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions., , , , , , , , , and 4 other author(s). IRPS, page 1-5. IEEE, (2024)Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs., and . IRPS, page 5-1. IEEE, (2018)Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI., , , and . IRPS, page 1-7. IEEE, (2021)Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress., , and . IRPS, page 56-1. IEEE, (2022)A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs., , , , and . Microelectron. Reliab., 54 (3): 491-519 (2014)Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays., , and . IRPS, page 1-6. IEEE, (2024)