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On the volatility of oxide defects: Activation, deactivation, and transformation.

T. Grasser, M. Wahl, W. Goes, Y. Wimmer, A. El-Sayed, A. Shluger, and B. Kaczer. IRPS, page 5. IEEE, (2015)

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Claus Goes

Gudrun Goes

Günther Goes

Rudolf Göes

Other publications of authors with the same name

Characterization and modeling of reliability issues in nanoscale devices.G. Rzepa, W. Goes, B. Kaczer, and T. Grasser. ISCAS, page 2445-2448. IEEE, (2015)Spin Torques in ULTRA-Scaled MRAM Devices.S. Fiorentini, M. Bendra, J. Ender, R. de Orio, W. Goes, S. Selberherr, and V. Sverdlov. ESSDERC, page 348-351. IEEE, (2022)A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification.W. Goes, D. Green, P. Blaise, G. Piccolboni, A. Bricalli, A. Regev, G. Molas, and J. Nodin. IMW, page 1-4. IEEE, (2021)Characterization and modeling of charge trapping: From single defects to devices.T. Grasser, G. Rzepa, M. Waltl, W. Goes, K. Rott, G. Rott, H. Reisinger, J. Franco, and B. Kaczer. ICICDT, page 1-4. IEEE, (2014)On the volatility of oxide defects: Activation, deactivation, and transformation.T. Grasser, M. Wahl, W. Goes, Y. Wimmer, A. El-Sayed, A. Shluger, and B. Kaczer. IRPS, page 5. IEEE, (2015)Back-Hopping in Ultra-Scaled MRAM Cells.M. Bendra, S. Fiorentini, J. Ender, R. de Orio, T. Hadámek, N. Jørstad, B. Pruckner, S. Selberherr, W. Goes, and V. Sverdlov. MIPRO, page 159-162. IEEE, (2023)Spin Transfer Torques in Ultra-Scaled MRAM Cells.M. Bendra, S. Fiorentini, J. Ender, R. de Orio, T. Hadámek, W. Loch, N. Jørstad, S. Selberherr, W. Goes, and V. Sverdlov. MIPRO, page 129-132. IEEE, (2022)Finite Element Method Approach to MRAM Modeling.M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. de Orio, W. Goes, V. Sverdlov, and S. Selberherr. MIPRO, page 70-73. IEEE, (2021)Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect.B. Pruckner, N. Jørstad, T. Hadámek, W. Goes, S. Selberherr, and V. Sverdlov. MIPRO, page 1584-1589. IEEE, (2024)Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling.M. Bendra, B. Pruckner, R. de Orio, S. Selberherr, W. Goes, and V. Sverdlov. DRC, page 1-2. IEEE, (2024)

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Disambiguation of "Goes, Wolfgang"

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On the volatility of oxide defects: Activation, deactivation, and transformation.

Please choose a person to relate this publication to

Claus Goes

Gudrun Goes

Gudrun Goes

Günther Goes

Rudolf Göes

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Goes, Wolfgang"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML On the volatility of oxide defects: Activation, deactivation, and transformation.

Please choose a person to relate this publication to

Claus Goes

Gudrun Goes

Gudrun Goes

Günther Goes

Rudolf Göes

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

On the volatility of oxide defects: Activation, deactivation, and transformation.