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Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.

, , , , , , , , and . Microelectron. Reliab., 53 (8): 1130-1136 (2013)

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A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology., , , , , , , and . WOCN, page 1-4. IEEE, (2011)Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs., , , , and . Microelectron. Reliab., 51 (12): 2163-2167 (2011)Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design., , , , , , , , and . Microelectron. Reliab., 53 (8): 1130-1136 (2013)Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis., , , , , , and . Microelectron. Reliab., 53 (12): 1897-1900 (2013)A low phase noise 20 GHz voltage control oscillator using 0.18-μm CMOS technology., , , , , and . DDECS, page 185-188. IEEE Computer Society, (2010)A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology., , , and . DDECS, page 79-82. IEEE, (2012)0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area., , , , , , and . DDECS, page 194-197. IEEE Computer Society, (2009)Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology., , , , , , and . DDECS, page 250-253. IEEE Computer Society, (2013)