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Disambiguation of "Chaujar, Rishu"

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Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency.

, , and . ISED, page 192-196. IEEE Computer Society, (2014)

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Other publications of authors with the same name

Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero-material tunneling interfaced charge plasma junctionless tunnel field effect transistor., and . Int. J. Circuit Theory Appl., 50 (10): 3626-3641 (2022)Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization., , and . Microelectron. J., (2023)A Novel GAA Hollow Cavity FinFET based biosensor for Cancer protein marker sensing., and . MOCAST, page 1-4. IEEE, (2020)Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications., , , and . MOCAST, page 1-4. IEEE, (2019)Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design., , and . Microelectron. J., (September 2023)Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency., , and . ISED, page 192-196. IEEE Computer Society, (2014)Implementing True Zero Cycle Branching in Scalar and Superscalar Pipelined Processors, and . ACEEE International Journal of Information Technology, 3 (3): 6 (September 2013)Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications., , , , , and . TENCON, page 2564-2567. IEEE, (2019)Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications., , , and . TENCON, page 1070-1074. IEEE, (2018)