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Imaging Standoff Detection of Explosives by Diffuse Reflectance IR Laser Spectroscopy., , , , , , , and . Future Security, volume 318 of Communications in Computer and Information Science, page 388-399. Springer, (2012)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 55 (9-10): 1667-1671 (2015)20-40 Gb/s 0.2-μm GaAs HEMT chip set for optical data receiver., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 32 (9): 1384-1393 (1997)Mixed signal integrated circuits based on GaAs HEMTs., , , , , , , , , and 11 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 6 (1): 6-17 (1998)