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5–31-Hz 188- uW Light-Sensing Oscillator With Two Active Inductors Fully Integrated on Plastic, , , , , , , и . IEEE Journal of Solid-State Circuits, 54 (8): 2195-2206 (августа 2019)Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs, , , , , , , и . 2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), стр. 1-3. (июля 2019)A fully integrated audio amplifier in flexible a-IGZO TFT technology for printed piezoelectric loudspeakers., , , , , , , , , и . ECCTD, стр. 1-4. IEEE, (2015)A 173-200 GHz quadrature voltage-controlled oscillator in 130 nm SiGe BiCMOS., , , и . A-SSCC, стр. 97-100. IEEE, (2017)A 20 Gb/s 3.8 pJ/bit 1: 4 Demux in 45-nm CMOS., , , , , , и . ISCAS, стр. 1-4. IEEE, (2019)Tunable Wideband Amplifier at 180 GHz with 22 dB Gain and 40 GHz Bandwidth in 130 nm SiGe., , , и . ICECS, стр. 5-8. IEEE, (2019)20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT., , , , , , , , , и 1 other автор(ы). ESSCIRC, стр. 79-82. IEEE, (2016)IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 74-77. IEEE, (2019)A 70°phase margin OPAMP with positive feedback in flexible a-IGZO TFT technology., , , , , , , , , и . MWSCAS, стр. 1-4. IEEE, (2015)BiCMOS Variable Gain LNA at C-Band with Ultra Low Power Consumption for WLAN., , , , , , и . ICT, том 3124 из Lecture Notes in Computer Science, стр. 891-899. Springer, (2004)