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A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation.

, , , , , and . DATE, page 1789-1794. EDA Consortium San Jose, CA, USA / ACM DL, (2013)

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MoS2/graphene Lateral Heterostructure Field Effect Transistors., , , , , , , , , and 5 other author(s). DRC, page 1-2. IEEE, (2021)A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation., , , , , and . DATE, page 1789-1794. EDA Consortium San Jose, CA, USA / ACM DL, (2013)Simulation of three-dimensional nanoelectronic devices.. University of Pisa, Italy, (2005)Multiscale Modeling for Graphene-Based Nanoscale Transistors., and . Proc. IEEE, 101 (7): 1653-1669 (2013)Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors., , , and . ACM Great Lakes Symposium on VLSI, page 233-238. ACM, (2010)Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective., , , , , , and . ESSCIRC, page 55-58. IEEE, (2016)Electric-field controlled spin transport in bilayer CrI3., , , , and . ESSCIRC, page 59-62. IEEE, (2021)Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs., , , , , , and . ESSDERC, page 18-21. IEEE, (2018)Material selection and device design guidelines for two-dimensional materials based TFETs., , , , , , and . ESSDERC, page 54-57. IEEE, (2017)