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In-Memory Vector-Matrix Multiplication in Monolithic Complementary Metal-Oxide-Semiconductor-Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives.

A. Amirsoleimani, F. Alibart, V. Yon, J. Xu, M. Pazhouhandeh, S. Ecoffey, Y. Beilliard, R. Genov, and D. Drouin. Adv. Intell. Syst., 2 (11): 2000115 (2020)

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Elena Sergeyev

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Dieter Sergel

Jean-Frédéric Sergejew

Other publications of authors with the same name

In-Memory Vector-Matrix Multiplication in Monolithic Complementary Metal-Oxide-Semiconductor-Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives.A. Amirsoleimani, F. Alibart, V. Yon, J. Xu, M. Pazhouhandeh, S. Ecoffey, Y. Beilliard, R. Genov, and D. Drouin. Adv. Intell. Syst., 2 (11): 2000115 (2020)A manufacturable process for single electron charge detection, a step towards quantum computing.G. Droulers, S. Ecoffey, D. Drouin, and M. Pioro-Ladriere. ESSDERC, page 337-340. IEEE, (2016)Towards miniaturized pH sensor based on carbon nanotubes assembled by DEP on titanium electrodes?A. Maalaoui, M. Frénéa-Robin, J. Genest, S. Ecoffey, J. Beauvais, P. Charette, D. Drouin, and J. Cloarec. ICIT, page 1350-1354. IEEE, (2018)Towards scalable cryogenic quantum dot biasing using memristor-based DC sources.P. Mouny, R. Dawant, P. Dufour, M. Valdenaire, S. Ecoffey, M. Pioro-Ladriere, Y. Beilliard, and D. Drouin. CoRR, (2024)AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators.T. Liu, A. Amirsoleimani, F. Alibart, S. Ecoffey, D. Drouin, and R. Genov. IEEE Trans. Circuits Syst. II Express Briefs, 68 (4): 1128-1132 (2021)Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing.A. Mesoudy, G. Lamri, R. Dawant, J. Arias-Zapata, P. Gliech, Y. Beilliard, S. Ecoffey, A. Ruediger, F. Alibart, and D. Drouin. CoRR, (2021)3D microelectronic with BEOL compatible devices.D. Drouin, M. Amine-Bounouar, G. Droulers, M. Labalette, M. Pioro-Ladriere, A. Souifi, and S. Ecoffey. VTS, page 1. IEEE Computer Society, (2015)Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor.G. Ayele, S. Monfray, F. Boeuf, J. Cloarec, S. Ecoffey, D. Drouin, E. Puyoo, and A. Souifi. ESSDERC, page 264-267. IEEE, (2017)

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Disambiguation of "Ecoffey, Serge"