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A 0.3-to-1.2GHz tunable 4th-order switched gm-C bandpass filter with >55dB ultimate rejection and out-of-band IIP3 of +29dBm., , , и . ISSCC, стр. 358-360. IEEE, (2012)A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving p-p Output Swing Over 0.01-5.4-GHz for Direct RF Sampling Applications., , и . IEEE J. Solid State Circuits, 57 (5): 1432-1445 (2022)A Baseband-Matching-Resistor Noise-Canceling Receiver With a Three-Stage Inverter-Only OpAmp for High In-Band IIP3 and Wide IF Applications., , и . IEEE J. Solid State Circuits, 56 (7): 1994-2006 (2021)An integrated 80-V class-D power output stage with 94% efficiency in a 0.14µm SOI BCD process., , и . ESSCIRC, стр. 89-92. IEEE, (2013)A High-Voltage Class-D Power Amplifier With Switching Frequency Regulation for Improved High-Efficiency Output Power Range., , и . IEEE J. Solid State Circuits, 50 (6): 1451-1462 (2015)Active feedback receiver with integrated tunable RF channel selectivity, distortion cancelling, 48dB stopband rejection and >+12dBm wideband IIP3, occupying 2 in 65nm CMOS., , и . ISSCC, стр. 166-168. IEEE, (2012)Performance of chirped-FSK and chirped-PSK in the presence of partial-band interference., , , и . SCVT, стр. 1-6. IEEE, (2011)Design and Analysis of a High-Efficiency High-Voltage Class-D Power Output Stage., , и . IEEE J. Solid State Circuits, 49 (7): 1514-1524 (2014)Active Feedback Technique for RF Channel Selection in Front-End Receivers., , и . IEEE J. Solid State Circuits, 47 (12): 3130-3144 (2012)Analysis of a 1kbps Backscatter Receiver with up to -80dBm Tag-to-tag Receive Sensitivity., , и . RFID, стр. 1-8. IEEE, (2020)