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GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

J. Gao, Y. Jin, B. Xie, C. Wen, Y. Hao, and M. Wang. DRC, page 1-2. IEEE, (2018)

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Y Winter

Hong Jin

Hua Jing

Li Jin

Xiufang Jin

Other publications of authors with the same name

High-level expression and single-step purification of human tryptophanyl-tRNA synthetaseF. Xu, J. Jia, Y. Jin, T. Wang, X. F, J. J, J. Y, and W. Dt. Protein Expr. Purif., (2001)Natural Convection of High Prandtl Number Fluids with Variable Viscosity in a Vertical SlotY. Jin, and C. Chen. Intl J. Heat Mass Transfer, (1996)The "Virtual Design Team": Simulating How Organization Structure and Information Processing Tools Affect Team PerformanceR. Levitt, G. Cohen, J. Kunz, C. Nass, T. Christiansen, and Y. Jin. chapter 1, page 1-18. Lawrence Erlbaum, (1994)A Foveated Video Quality Assessment Model Using Space-Variant Natural Scene Statistics.Y. Jin, T. Goodall, A. Patney, R. Webb, and A. Bovik. ICIP, page 1419-1423. IEEE, (2021)Pricing and replenishment strategies in supply chains with competing loss averse retailers.H. Suo, J. Wang, and Y. Jin. CDC, page 986-991. IEEE, (2004)A Low-Complexity FMCW Surveillance Radar Algorithm Using Two Random Beat SignalsB. Kim, Y. Jin, and J. Lee. sensors, (2018)Forecasting Fire Season Severity in South America Using Sea Surface Temperature AnomaliesY. Chen, J. Randerson, D. Morton, R. DeFries, G. Collatz, P. Kasibhatla, L. Giglio, Y. Jin, and M. Marlier. Science, 334 (6057): 787--791 (Nov 10, 2011)Measurement of $e^+ e^- K^+ K^-$ cross section at $s = 2.00 - 3.08$ GeVB. Collaboration, M. Ablikim, M. Achasov, S. Ahmed, M. Albrecht, M. Alekseev, A. Amoroso, F. An, Q. An, J. Bai and 450 other author(s). (2018)cite arxiv:1811.08742Comment: 8 figures.GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.J. Gao, Y. Jin, B. Xie, C. Wen, Y. Hao, and M. Wang. DRC, page 1-2. IEEE, (2018)Experiments in On-Line Learning Neuro-Control.A. Pipe, M. Randall, and Y. Jin. FLAIRS, page 309-314. AAAI Press, (1999)

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Disambiguation of "Jin, Y."

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GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

Please choose a person to relate this publication to

Y Winter

Hong Jin

Hua Jing

Li Jin

Xiufang Jin

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Jin, Y."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

Please choose a person to relate this publication to

Y Winter

Hong Jin

Hua Jing

Li Jin

Xiufang Jin

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.