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First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors.

S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. Wu, C. Hsu, J. Guy, T. Lee, H. Wong, and X. Bao. VLSI Technology and Circuits, page 324-325. IEEE, (2022)

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Elia elwanowa

Marco Ambrosi

Klaus Ambrosi

Hans Ambrosi

Peter Ambrosi

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A Volatile RRAM Synapse for Neuromorphic Computing.E. Covi, D. Ielmini, Y. Lin, W. Wang, T. Stecconi, V. Milo, A. Bricalli, E. Ambrosi, G. Pedretti, and T. Tseng. ICECS, page 903-906. IEEE, (2019)Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM).G. Pedretti, E. Ambrosi, and D. Ielmini. IRPS, page 1-8. IEEE, (2021)Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks.V. Milo, G. Pedretti, M. Laudato, A. Bricalli, E. Ambrosi, S. Bianchi, E. Chicca, and D. Ielmini. ISCAS, page 1-5. IEEE, (2018)Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage.N. Polino, M. Laudato, E. Ambrosi, A. Bricalli, and D. Ielmini. ESSDERC, page 126-129. IEEE, (2019)In-memory solution of linear systems with crosspoint arrays without iterations.Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, W. Wang, and D. Ielmini. DRC, page 215-216. IEEE, (2019)Characterization of resistive switching devices for memory and computing.E. Ambrosi. Polytechnic University of Milan, Italy, (2020)In-Memory Eigenvector Computation in Time O (1).Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, and D. Ielmini. Adv. Intell. Syst., 2 (8): 2000042 (2020)A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching Operation.P. Chang, P. Liao, C. Wu, Y. Chang, D. Hou, E. Ambrosi, H. Lee, J. Lee, and X. Bao. IRPS, page 1-5. IEEE, (2023)First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors.S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. Wu, C. Hsu, J. Guy, T. Lee, H. Wong and 1 other author(s). VLSI Technology and Circuits, page 324-325. IEEE, (2022)In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices.Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, and D. Ielmini. AICAS, page 26-30. IEEE, (2020)

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Disambiguation of "Ambrosi, Elia"

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First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors.

Please choose a person to relate this publication to

Elia elwanowa

Marco Ambrosi

Klaus Ambrosi

Hans Ambrosi

Peter Ambrosi

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Ambrosi, Elia"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors.

Please choose a person to relate this publication to

Elia elwanowa

Marco Ambrosi

Klaus Ambrosi

Hans Ambrosi

Peter Ambrosi

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors.