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A 2.3nW Gate-Leakage Based Sub-Bandgap Voltage Reference with Line Sensitivity of 0.0066%/V from -40°C to 150°C for Low-Power IoT Systems.

A. Dey, B. Subramaniam, A. Ali, B. Sahishnavi, A. Pullela, and Z. Abbas. ISCAS, page 1-5. IEEE, (2023)

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Hossein Zia

Abbas Abbas

Qamer Zia

Waqar Zia

Mohammad Zia

Other publications of authors with the same name

Yield optimization for low power current controlled current conveyor.Z. Abbas, M. Yakupov, M. Olivieri, A. Ripp, and G. Strube. SBCCI, page 1-6. IEEE, (2012)A 0.85V Supply, High PSRR CMOS Voltage Reference without Resistor and Amplifier for Ultra-Low Power Applications.A. Pathy, A. Banthi, and Z. Abbas. MWSCAS, page 995-998. IEEE, (2021)A 2.3nW Gate-Leakage Based Sub-Bandgap Voltage Reference with Line Sensitivity of 0.0066%/V from -40°C to 150°C for Low-Power IoT Systems.A. Dey, B. Subramaniam, A. Ali, B. Sahishnavi, A. Pullela, and Z. Abbas. ISCAS, page 1-5. IEEE, (2023)Low Quiescent Current, Capacitor-Less LDO with Adaptively Biased Power Transistors and Load Aware Feedback Resistance.B. Battu, M. Kelam, K. De, and Z. Abbas. ISCAS, page 1-5. IEEE, (2020)A 419pW Process-Invariant Temperature Sensor for Ultra-Low Power Microsystems.A. Pullela, A. Ali, A. Jain, A. Banthi, and Z. Abbas. ISCAS, page 1-5. IEEE, (2021)67ppm/°C, 66nA PVT Invariant Curvature Compensated Current Reference for Ultra-Low Power Applications.B. Battu, M. Kelam, A. Bathi, and Z. Abbas. ISCAS, page 1-5. IEEE, (2020)Transistor Sizing based PVT-Aware Low Power Optimization using Swarm Intelligence.P. Saha, H. Kalluru, and Z. Abbas. VLSID, page 234-239. IEEE, (2021)A 0.8-V, 593-pA Trim-free Duty-cycled All CMOS Current Reference for Ultra-Low Power IoT Applications.C. Mittal, A. Dey, A. Banerjee, A. Ali, and Z. Abbas. VLSID, page 599-604. IEEE, (2024)A Single-Point, Auto-Calibration Technique For PTAT/CTAT Resistance Based Current References.A. Jain, A. Ali, D. Akula, A. Pullela, and Z. Abbas. ISCAS, page 1-5. IEEE, (2024)A 47nW, 0.7-3.6V wide Supply Range, Resistor Based Temperature Sensor for IoT Applications.A. Ali, S. Kiran, A. Jain, and Z. Abbas. VLSI-SoC, page 293-298. IEEE, (2019)

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Disambiguation of "Abbas, Zia"

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A 2.3nW Gate-Leakage Based Sub-Bandgap Voltage Reference with Line Sensitivity of 0.0066%/V from -40°C to 150°C for Low-Power IoT Systems.

Please choose a person to relate this publication to

Hossein Zia

Abbas Abbas

Qamer Zia

Waqar Zia

Mohammad Zia

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Abbas, Zia"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 2.3nW Gate-Leakage Based Sub-Bandgap Voltage Reference with Line Sensitivity of 0.0066%/V from -40°C to 150°C for Low-Power IoT Systems.

Please choose a person to relate this publication to

Hossein Zia

Abbas Abbas

Qamer Zia

Waqar Zia

Mohammad Zia

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 2.3nW Gate-Leakage Based Sub-Bandgap Voltage Reference with Line Sensitivity of 0.0066%/V from -40°C to 150°C for Low-Power IoT Systems.