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On smoothing three-dimensional Monte Carlo ion implantation simulation results.

, , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 22 (7): 879-883 (2003)

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Three-Dimensional MOS Device Simulation on a Connection Machine., , and . PPSC, page 388-393. SIAM, (1991)Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator., , , , and . LSSC, volume 3743 of Lecture Notes in Computer Science, page 594-601. Springer, (2005)Spin-Based CMOS-Compatible Devices., and . LSSC, volume 9374 of Lecture Notes in Computer Science, page 42-49. Springer, (2015)A shared memory parallel multi-mesh fast marching method for re-distancing., , , and . Adv. Comput. Math., 45 (4): 2029-2045 (2019)Shared-memory parallelization of the semi-ordered fast iterative method., , , and . SpringSim (HPS), page 217-224. SCS/ACM, (2015)Emerging memory technologies: Trends, challenges, and modeling methods., , and . Microelectron. Reliab., 52 (4): 628-634 (2012)Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study., , and . MIXDES, page 168-171. IEEE, (2020)Calculation of contact currents in device simulation., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 11 (1): 128-136 (1992)On smoothing three-dimensional Monte Carlo ion implantation simulation results., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 22 (7): 879-883 (2003)Layout Data in TCAD Frameworks., and . ESM, page 1122-. SCS, The Society for Computer Simulation International, (1996)