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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.

, , , , and . Microelectron. Reliab., (2017)

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Mechanisms of power module source metal degradation during electro-thermal aging., , , , , and . Microelectron. Reliab., (2017)Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique., , , , and . Microelectron. Reliab., 51 (6): 1127-1135 (2011)SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation., , , and . Math. Comput. Simul., (2019)Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation., , , , and . Microelectron. Reliab., (2017)Application of thermoelectricity to IGBT for temperature regulation and energy harvesting., , and . ISIE, page 211-216. IEEE, (2012)Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition., , , , , , and . Microelectron. Reliab., 51 (2): 386-391 (2011)Boundary element analysis of thermal fatigue effects on high power IGBT modules., and . Microelectron. Reliab., 44 (6): 929-938 (2004)Characterisation of power modules ceramic substrates for reliability aspects., , , , and . Microelectron. Reliab., 49 (9-11): 1260-1266 (2009)Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices., , and . Microelectron. Reliab., 47 (2-3): 422-428 (2007)Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs., , , , , and . Microelectron. Reliab., 55 (9-10): 1708-1713 (2015)