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GaN MIS HEMTs under off-state stress with UV light.

Y. Chen, Q. Zhu, J. Zhu, M. Mi, M. Zhang, Y. Zhou, Z. Zhao, X. Ma, and Y. Hao. Sci. China Inf. Sci., (February 2023)

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Xiaohua Fan

Xiaohua Chen

Xiaohua Huang

Xiaohua Chen

Other publications of authors with the same name

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.Q. Zhu, X. Ma, B. Hou, M. Wu, J. Zhu, L. Yang, M. Zhang, and Y. Hao. IEEE Access, (2020)An efficient multiple kernel learning in reproducing kernel Hilbert spaces (RKHS).L. Xu, B. Luo, Y. Tang, and X. Ma. Int. J. Wavelets Multiresolution Inf. Process., 13 (2): 1550008:1-1550008:13 (2015)Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.H. Lu, X. Ma, B. Hou, L. Yang, T. Huo, Z. Si, and Y. Hao. ICTA, page 78-79. IEEE, (2021)First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.H. Lu, L. Zhou, L. Deng, L. Yang, B. Hou, X. Ma, and Y. Hao. ICTA, page 30-31. IEEE, (2022)Mixed Boundary-Value Analysis of Rocking Vibrations of an Elastic Strip Foundation on Elastic Soil with Saturated Substrata.X. Ma, Z. Wang, Y. Cai, and C. Xu. J. Appl. Math., (2013)A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits.Y. Wang, X. Ma, Y. Lu, B. Zhao, Z. Zhao, C. Yi, L. Yang, J. Shi, and Y. Hao. IEEE Trans. Instrum. Meas., (2022)Recent progress of integrated circuits and optoelectronic chips.Y. Hao, S. Xiang, G. Han, J. Zhang, X. Ma, Z. Zhu, X. Guo, Y. Zhang, Y. Han, Z. Song and 27 other author(s). Sci. China Inf. Sci., (2021)Recovery of high order accuracy in spectral collocation method for linear Volterra integral equations of the third-kind with non-smooth solutions.X. Ma, and C. Huang. J. Comput. Appl. Math., (2021)Testing for Resistive Shorts in FPGA Interconnects.H. Gao, Y. Yang, X. Ma, and G. Dong. ISQED, page 159-163. IEEE Computer Society, (2005)Optical switching technology comparison: optical MEMS vs. other technologies.X. Ma, and G. Kuo. IEEE Communications Magazine, (2003)

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Disambiguation of "Ma, Xiaohua"

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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

Please choose a person to relate this publication to

Xiaohua Fan

Xiaohua Chen

Xiaohua Chen

Xiaohua Huang

Xiaohua Chen

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Ma, Xiaohua"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

Please choose a person to relate this publication to

Xiaohua Fan

Xiaohua Chen

Xiaohua Chen

Xiaohua Huang

Xiaohua Chen

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
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APA
Chicago
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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.