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Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry

, , , and . Journal of Crystal Growth, (1997)

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Temperature dependence of the InP(001) bulk and surface dielectric function, , , , , , , , , and . Appl.~Phys.~A, (1997)Optical response of reconstructed GaP(001) surfaces, , , , , , and . Phys.~Rev.~B, (1999)Optical in-situ control during MOVPE and MBE growth. Philos. Trans. R. Soc (London) A, (1993)GaP(001) and Inp(001): Reflectance anisotropy and surface geometry, , , , , , , , , and 1 other author(s). J.~Vac.~Sci.~Technol.~B, (1999)Understanding reflectance anisotropy: Surface-state signature and bulk-related features in the optical spectrum of InP(001)(2x4), , , , , , , , , and 1 other author(s). Phys.~Rev.~B, (2000)In-situ Monitoring of InAs-on-GaAs Quantum Dot Formation in MOVPE by Reflectance-Anisotropy-Spectroscopy and Ellipsometry, , , , , , and . Appl. Surf. Science, (1996)Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry, , , and . Journal of Crystal Growth, (1997)Atomic Surface Structure of MOVPE-Grown InP(001), , , , , , , , and . phys.~status solidi (b), (1999)(2$\times$4) GaP(001) surface: Atomic structrure and optical anisotropy, , , , , and . Phys.~Rev.~B, (1999)Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE, , , , , and . Phys.~Rev.~B, (1999)