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A K-band CMOS Power Amplifier with 3-Bit Phase Shifting Characteristics., , , , and . ISOCC, page 378-379. IEEE, (2022)A linear InGaP/GaAs HBT power amplifier for LTE B7 applications., , , , , , and . ISOCC, page 234-235. IEEE, (2017)A 28-GHz 28.5-dBm power amplifier using 0.15-µm InGaAs E-mode pHEMT technology., , , , , and . ISOCC, page 257-258. IEEE, (2018)Millimeter-wave channel model parameters for urban microcellular environment based on 28 and 38 GHz measurements., , , , , and . PIMRC, page 1-5. IEEE, (2016)A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications., , , , , and . ISOCC, page 376-377. IEEE, (2022)Implementation of Single Chip 28 GHz SPDT Switch-less Front-end Circuits in a 65nm CMOS process., , , , , and . ICTC, page 1814-1816. IEEE, (2023)Sub-THz Transmitter Radio Integrated Circuits for Super high-speed 6G Mobile Communications., , , , , and . ICTC, page 769-772. IEEE, (2023)Low latency block scaling for baseband signal compression., , and . ICTC, page 105-110. IEEE, (2014)A D-band 1-channel Beamforming Transmitter Integrated Circuits for 6G mobile communication., , , , , , , , , and . ICTC, page 1152-1153. IEEE, (2023)