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$35 \ GHz$ mode-locking of $1.3$ $m$ quantum dot lasers

, , , , , , , , , , , и . Appl.~Phys.~Lett., (2004)

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R. A. A. Bowler

M A R Meier

Federico B A A R Matousek

Felix A R Müller

R F A Moritz

 

Другие публикации лиц с тем же именем

Low threshold injection lasers based on vertically coupled quantum dots, , , , , , , , , и 8 other автор(ы). J. Crystal Growth, 175 (2): 689--695 (1997)Spectrotemporal response of $1.3 \ m$ quantum-dot lasers, , , , , , и . Appl.~Phys.~Lett., 81 (20): 3846--3848 (2002)Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers, , , , , , , , , и . Appl.~Phys.~Lett., (2006)High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers, , , , , , , , , и 5 other автор(ы). IEEE Photon. Technol. Lett., (2004)Direct modulation and mode locking of $1.3 m$ quantum dot lasers, , , , , , , , , и 8 other автор(ы). New~J.~Phys., (2004)High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser, , , , , , , , , и 6 other автор(ы). J.~Appl.~Phys., (1998)$35 \ GHz$ mode-locking of $1.3$ $m$ quantum dot lasers, , , , , , , , , и 2 other автор(ы). Appl.~Phys.~Lett., (2004)$10 Gbit/s$ data modulation using $1.3 \ m$ InGaAs quantum dot lasers, , , , , , , и . Electron.~Lett., (2005)Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures, , , , , , , , , и 1 other автор(ы). Journal of Electronic Materials, 28 (5): 486 (1999)Electronic structure of self-assembled InAs quantum dots in GaAs matrix, , , , , , , , и . Appl.~Phys.~Lett., (1998)