( en | de | ru )

 

Disambiguation of "Lehmann, Torsten"

Author of the publication

copydeleteadd this publication to your clipboard
Design of a digital harmonic-cancelling sine-wave synthesizer with 100 MHz output frequency, 43.5 dB SFDR, and 2.26 mW power.

, , , , and . ISCAS, page 3052-3055. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Torsten Lehmann

Torsten Lehmann

Torsten Lehmann

Torsten Lehmann

Jens-Torsten Lehmann

 

Other publications of authors with the same name

Towards the implementation of a cryogenic D/A converter for silicon quantum computer controller., and . MWSCAS, page 1108-1111. IEEE, (2012)Nauta OTA in a second-order continuous-time delta-sigma modulator., , , , , and . MWSCAS, page 849-852. IEEE, (2014)Microelectronic Retinal Prosthesis: I. A Neurostimulator for the Concurrent Activation of Multiple Electrodes., , , , , and . EMBC, page 4647-4650. IEEE, (2006)Required matching accuracy of biphasic current pulse in multi-channel current mode bipolar stimulation for safety., , and . EMBC, page 3025-3028. IEEE, (2012)A reconfigurable buck-boost switched capacitor converter architecture for multiple, distributed on-chip load applications., , and . NEWCAS, page 464-467. IEEE, (2014)Analog circuits for thermistor linearization with Chebyshev-optimal linearity error., and . ECCTD, page 910-913. IEEE, (2007)A cryogenic single electron transistor readout circuit: Practical issues and measurement considerations., and . ISCAS, page 1359-1362. IEEE, (2012)Design of a digital harmonic-cancelling sine-wave synthesizer with 100 MHz output frequency, 43.5 dB SFDR, and 2.26 mW power., , , , and . ISCAS, page 3052-3055. IEEE, (2015)Laser-micromachined, chip-scaled ceramic carriers for implantable neurostimulators., , , , , , and . EMBC, page 1085-1088. IEEE, (2011)High-voltage tolerant switch configuration using standard 3.3-V 0.5-μm silicon-on-sapphire CMOS transistors., and . APCCAS, page 591-594. IEEE, (2014)