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DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures., , , , , , , , and . BCICTS, page 1-4. IEEE, (2019)Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown., , , , and . BCICTS, page 1-4. IEEE, (2019)The SiGe HBT at Cryogenic Temperatures: Invited Pager.. BCICTS, page 274-279. IEEE, (2023)Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier., , , , , , and . BCICTS, page 1-4. IEEE, (2020)A 42.5-51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and Attenuator., , , , , and . BCICTS, page 183-186. IEEE, (2022)A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology., , , , , , , , and . ESSCIRC, page 263-266. IEEE, (2005)A new figure-of-merit for CML gate delay estimation., , , , and . WiSNet, page 73-76. IEEE, (2018)Implementation of a low cost, lightweight X-band antenna with integrated SiGe RF electronics., , , , , and . IGARSS, page 681-684. IEEE, (2010)Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits., , , , , , , , and . Sensors, 20 (9): 2581 (2020)A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator., , , , , and . BCICTS, page 1-5. IEEE, (2020)