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j-B characteristics of S-type in the present of multivalued electron distribution between the equivalent valleys in Si

, , , and . J.~Phys.~C, (1984)

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j-B characteristics of S-type in the present of multivalued electron distribution between the equivalent valleys in Si, , , and . J.~Phys.~C, (1984)Low temperature breakdown and current filamentation in n-type GaAs with homogeneous and partially ordered Si doping, , , , , , and . Semicond.~Sci.~Technol., (1995)Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode, , , , and . J.~Appl.~Phys., (1996)S-type negative differential conductivity and voltage switching due to the avalanche in semiconductor heterostructures, , , and . Semicond.~Sci.~Technol., (1999)Voltage switching and oscillations in a single barrier heterostructure hot-electron diode, , , and . J.~Appl.~Phys., (1998)Field-induced real-space transfer in Delta-doped GaAs, , , , , and . Phys.~Rev.~B, (1993)Conductivity and transverse fields in n-Si for currents in the 110 and 100 planes, , , , and . phys.~status solidi (b), (1982)Transverse transport in n GaAs/AlGaAs/n-GaAs Structures, , , , and . phys.~status solidi (b), (1989)Dynamics of the single barrier heterostructure hot electron diode, , , , , and . J.~Appl.~Phys., (1997)