( en | de | ru )

 

Disambiguation of "Aparin, Vladimir"

Author of the publication

copydeleteadd this publication to your clipboard
A 28GHz Bulk-CMOS dual-polarization phased-array transceiver with 24 channels for 5G user and basestation equipment.

, , , , , , , , , , , , , , and . ISSCC, page 70-72. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Vladimir Legradi

Vladimir Spasitsch

Vladimir Oreskovic

Vladimir Popov

Vladimir Todorovic

 

Other publications of authors with the same name

20.6 A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS., , , , and . ISSCC, page 352-353. IEEE, (2016)Linearization of monolithic LNAs using low-frequency low-impedance input termination., and . ESSCIRC, page 137-140. IEEE, (2003)Active GaAs MMIC band-pass filters with automatic frequency tuning and insertion loss control., and . IEEE J. Solid State Circuits, 30 (10): 1068-1073 (October 1995)A +22dBm IIP3 and 3.5dB NF wideband receiver with RF and baseband blocker filtering techniques., , and . VLSIC, page 1-2. IEEE, (2014)A modified LMS adaptive filter architecture with improved stability at RF.. ESSCIRC, page 235-238. IEEE, (2005)Accurate prediction of spectral regrowth and in-channel distortion based on CDMA signal time-domain model.. CICC, page 53-56. IEEE, (2001)Simple Modification of Oja Rule Limits L1-Norm of Weight Vector and Leads to Sparse Connectivity.. Neural Comput., 24 (3): 724-743 (2012)An integrated LMS adaptive filter of TX leakage for CDMA receiver front ends., , , and . IEEE J. Solid State Circuits, 41 (5): 1171-1182 (2006)A transformer combined quadrature switched capacitor power amplifier in 65nm CMOS., , , , and . NEWCAS, page 1-4. IEEE, (2016)2.7 A wideband 28GHz power amplifier supporting 8×100MHz carrier aggregation for 5G in 40nm CMOS., , , , and . ISSCC, page 44-45. IEEE, (2017)