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Characterizing power delivery systems with on/off-chip voltage regulators for many-core processors.

, , , , , and . DATE, page 1-4. European Design and Automation Association, (2014)

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IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs., , , , , , and . IEEE Trans. Ind. Electron., 69 (8): 8387-8395 (2022)Characterizing power delivery systems with on/off-chip voltage regulators for many-core processors., , , , , and . DATE, page 1-4. European Design and Automation Association, (2014)High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer., and . DSP, page 1-5. IEEE, (2018)A Literal Gate Using Resonant-Tunneling Devices., , and . ISMVL, page 68-73. IEEE Computer Society, (1996)E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability., , , , , , and . ASICON, page 1-4. IEEE, (2021)Silicon-on-organic integration of a 2.4GHz VCO using high Q copper inductors and solder-bumped flip chip technology., , , and . CICC, page 537-540. IEEE, (2003)Residual stress characterization of GaN microstructures using bent-beam strain sensors., , , , , and . NEMS, page 138-140. IEEE, (2010)Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device., , , and . IEEE Trans. Ind. Electron., 69 (12): 12773-12783 (2022)Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET., , , , , and . ASICON, page 1-4. IEEE, (2019)An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators., , , , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 34 (9): 1401-1414 (2015)