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Effectiveness of Physical Robot Versus Robot Simulator in Teaching Introductory Programming.

, , , , and . TALE, page 486-493. IEEE, (2018)

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Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices., , , , and . Microelectron. Reliab., (2016)Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation., , , , , and . IRPS, page 1-6. IEEE, (2023)Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics., , , , , , and . IRPS, page 4. IEEE, (2018)Robust Electromigration reliability through engineering optimization., , , , , , and . Microelectron. Reliab., 54 (9-10): 1666-1670 (2014)Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach., , , and . Microelectron. Reliab., 55 (9-10): 1422-1426 (2015)Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction., , , , , , , , , and 2 other author(s). IRPS, page 6. IEEE, (2018)Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM., , , and . IRPS, page 5. IEEE, (2015)Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms., , , , , , , , , and 1 other author(s). IRPS, page 1-8. IEEE, (2019)Correct Extrapolation Model for TDDB of STT-MRAM MgO Magnetic Tunnel Junctions., , , , , , , and . IRPS, page 1-7. IEEE, (2019)Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns., , , , and . IRPS, page 1-12. IEEE, (2019)