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True random number generation exploiting SET voltage variability in resistive RAM memory arrays., , , , , , и . NVMTS, стр. 1-5. IEEE, (2019)Leakage paths identification in NVM using biased data retention., , , , , и . Microelectron. Reliab., 50 (9-11): 1474-1478 (2010)Access resistor modelling for EEPROM's retention test vehicle., , и . Microelectron. Reliab., 53 (9-11): 1218-1223 (2013)Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation., , , , и . DFT, стр. 1-4. IEEE, (2020)MRAM: from STT to SOT, for security and memory., , , , , , , , и . DCIS, стр. 1-6. IEEE, (2018)Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability., , , , , , и . J. Low Power Electron., 8 (5): 717-724 (2012)Dual Detection of Heating and Photocurrent attacks (DDHP) Sensor using Hybrid CMOS/STT-MRAM., , , , , , и . IOLTS, стр. 322-327. IEEE, (2019)Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories., , , , и . Microelectron. Reliab., 54 (9-10): 2262-2265 (2014)Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing., , , , , , , и . LATS, стр. 1-5. IEEE, (2024)Light-Weight Cipher Based on Hybrid CMOS/STT-MRAM: Power/Area Analysis., , , , , , и . ISCAS, стр. 1-5. IEEE, (2019)