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Influence of mobility model on extraction of stress dependent source-drain series resistance., , , , and . Microelectron. Reliab., 44 (1): 25-32 (2004)A high performance vertical Si nanowire CMOS for ultra high density circuits., , and . APCCAS, page 1219-1222. IEEE, (2010)Low power SRAM design for 14 nm GAA Si-nanowire technology., , , , , and . Microelectron. J., 46 (12): 1239-1247 (2015)Propagation Delay Analysis for Bundled Multi-Walled CNT in Global VLSI Interconnects., , , and . SocProS, volume 236 of Advances in Intelligent Systems and Computing, page 1117-1126. Springer, (2012)Characterisation of series resistance degradation through charge pumping technique., , , and . Microelectron. Reliab., 43 (4): 617-624 (2003)Comparison of crosstalk delay between single and bundled SWNT for global VLSI interconnects., , , and . RAIT, page 564-569. IEEE, (2012)An efficient method for ECSM characterization of CMOS inverter in nanometer range technologies., , , and . ISQED, page 665-669. IEEE, (2013)An 8 bit, 100 kS/s, switch-capacitor DAC SAR ADC for RFID applications., , , and . Microelectron. J., 46 (6): 453-461 (2015)Metal Carbon Nanotube Schottky Barrier Diode with Detection of Polar Non-polar Gases., , , and . VLSID, page 361-366. IEEE Computer Society, (2016)An accurate current source model for CMOS based combinational logic cell., , , , and . ISQED, page 561-565. IEEE, (2012)