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Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules.

, , , and . Microelectron. Reliab., (2017)

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Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment., , , , and . IECON, page 3367-3373. IEEE, (2014)Smart SiC MOSFET accelerated lifetime testing., and . Microelectron. Reliab., (2018)Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview., , , , , and . Microelectron. Reliab., (2016)Experimental study of power MOSFET's gate damage in radiation environment., , , , , and . Microelectron. Reliab., 46 (9-11): 1854-1857 (2006)A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis., , , and . Microelectron. Reliab., (2017)IGBT RBSOA non-destructive testing methods: Analysis and discussion., , and . Microelectron. Reliab., 50 (9-11): 1731-1737 (2010)Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer., , , , , and . IEEE Trans. Ind. Electron., 70 (7): 7290-7300 (July 2023)Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches., , , , and . IEEE Access, (2020)Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs., , and . Microelectron. Reliab., (2018)Non-destructive tester for single event burnout of power diodes., , , and . Microelectron. Reliab., 41 (9-10): 1725-1729 (2001)