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Disambiguation of "Kaczer, Ben"

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Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.

, , , , , , , , , and . IRPS, page 12-1. IEEE, (2022)

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Ben Schöttker

Ben Novak

Ben Schloesser

Ben Schacher

Ben Schmehe

 

Other publications of authors with the same name

Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling., , , , , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 20 (8): 1487-1495 (2012)Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 19 (9): 1569-1582 (2011)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectron. Reliab., (2018)FinFET and MOSFET preliminary comparison of gate oxide reliability., , , , , and . Microelectron. Reliab., 46 (9-11): 1608-1611 (2006)A Pragmatic Model to Predict Future Device Aging., , , , , , , , , and 1 other author(s). IEEE Access, (2023)Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , and . IRPS, page 3. IEEE, (2015)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation., , , , , and . IRPS, page 1-9. IEEE, (2023)