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s Interface.

M. Kim, S. Yun, J. Park, H. Park, J. Lee, Y. Kim, D. Na, S. Choi, Y. Song, J. Lee, H. Yoon, K. Lee, B. Jeong, S. Kim, J. Park, C. Lee, J. Lee, J. Lee, J. Chun, J. Jang, Y. Yang, S. Moon, M. Choi, W. Kim, J. Kim, S. Yoon, P. Kwak, M. Lee, R. Song, S. Kim, C. Yoon, D. Kang, J. Lee, and J. Song. ISSCC, page 136-137. IEEE, (2022)

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Ky ng Kim

Die Artikelstruktur in passiven zweisprachigen Wörterbüchern Deutsch-Koreanisch: Konzeption zur Erstellung eines zweisprachigen Lernerwörterbuchs Deutsch-KoreanischK. Kim. Uni Heidelberg, (2008)

Kim Gerber

Bongcheol Kim

Ryong Kim

Youngsang Kim

Other publications of authors with the same name

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.J. Im, W. Jeong, D. Kim, S. Nam, D. Shim, M. Choi, H. Yoon, D. Kim, Y. Kim, H. Park and 24 other author(s). ISSCC, page 1-3. IEEE, (2015)Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory.J. Ko, Y. Yang, J. Kim, C. Lee, Y. Min, J. Chun, M. Kim, and S. Jung. IEEE Trans. Very Large Scale Integr. Syst., 27 (8): 1828-1839 (2019)When Crowd Meets Persona: Creating a Large-Scale Open-Domain Persona Dialogue Corpus.W. Cho, Y. Lee, S. Bae, J. Kim, S. Park, M. Kim, S. Hahn, and N. Kim. CoRR, (2023)A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology.D. Lee, I. Chang, S. Yoon, J. Jang, D. Jang, W. Hahn, J. Park, D. Kim, C. Yoon, B. Lim and 27 other author(s). ISSCC, page 430-432. IEEE, (2012)A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.Y. Jo, A. Kavala, T. Kim, B. Chun, J. Park, T. Lee, J. Seo, M. Yang, T. Park, H. Kwon and 20 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface.M. Kim, S. Yun, J. Park, H. Park, J. Lee, Y. Kim, D. Na, S. Choi, Y. Song, J. Lee and 24 other author(s). ISSCC, page 136-137. IEEE, (2022)11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.C. Kim, J. Cho, W. Jeong, I. Park, H. Park, D. Kim, D. Kang, S. Lee, J. Lee, W. Kim and 34 other author(s). ISSCC, page 202-203. IEEE, (2017)7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.D. Kang, W. Jeong, C. Kim, D. Kim, Y. Cho, K. Kang, J. Ryu, K. Kang, S. Lee, W. Kim and 20 other author(s). ISSCC, page 130-131. IEEE, (2016)7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.S. Lee, J. Lee, I. Park, J. Park, S. Yun, M. Kim, J. Lee, M. Kim, K. Lee, T. Kim and 35 other author(s). ISSCC, page 138-139. IEEE, (2016)256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.D. Kang, W. Jeong, C. Kim, D. Kim, Y. Cho, K. Kang, J. Ryu, K. Kang, S. Lee, W. Kim and 19 other author(s). IEEE J. Solid State Circuits, 52 (1): 210-217 (2017)

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Disambiguation of "Kim, Moosung"

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A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface.

Please choose a person to relate this publication to

Ky ng Kim

Kim Gerber

Bongcheol Kim

Ryong Kim

Youngsang Kim

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Kim, Moosung"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface.

Please choose a person to relate this publication to

Ky ng Kim

Kim Gerber

Bongcheol Kim

Ryong Kim

Youngsang Kim

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface.