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A low-power radio chipset in 40nm LP CMOS with beamforming for 60GHz high-data-rate wireless communication., , , , , , , , , и 4 other автор(ы). ISSCC, стр. 236-237. IEEE, (2013)A 42 mW 200 fs-Jitter 60 GHz Sub-Sampling PLL in 40 nm CMOS., , , , , и . IEEE J. Solid State Circuits, 50 (9): 2025-2036 (2015)A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs., , , , , , , , и . ESSDERC, стр. 152-155. IEEE, (2023)Back-gate bias effect on UTBB-FDSOI non-linearity performance., , , , , , и . ESSDERC, стр. 148-151. IEEE, (2017)Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2020)The Potential of FinFETs for Analog and RF Circuit Applications., , , , , , , , , и 5 other автор(ы). IEEE Trans. Circuits Syst. I Regul. Pap., 54-I (11): 2541-2551 (2007)Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?, , , , , , , , , и 9 other автор(ы). ESSCIRC, стр. 84-87. IEEE, (2009)FinFET RF receiver building blocks operating above 10 GHz., , , , , , , и . ESSCIRC, стр. 360-363. IEEE, (2009)Device Scaling roadmap and its implications for Logic and Analog platform., , , , , , и . BCICTS, стр. 1-8. IEEE, (2020)A 40 nm LP CMOS PLL for high-speed mm-wave communication., , , , , , и . ESSCIRC, стр. 254-257. IEEE, (2010)