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Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations., , , , и . ICICDT, стр. 1-4. IEEE, (2015)Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits., , , , и . IEEE Trans. Very Large Scale Integr. Syst., 22 (2): 280-285 (2014)Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model., , , , , , , и . Microprocess. Microsystems, 37 (8-A): 792-800 (2013)A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS., , , , , и . A-SSCC, стр. 157-160. IEEE, (2018)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , и 6 other автор(ы). ICICDT, стр. 1-4. IEEE, (2012)Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology., , , , и . ICICDT, стр. 1-4. IEEE, (2015)Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology., , , , , , , , , и . IRPS, стр. 3. IEEE, (2015)Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling., , , , , , , , , и . IRPS, стр. 1-7. IEEE, (2019)Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling., , , , , , , , и . ISCAS, стр. 2249-2252. IEEE, (2011)Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance., , , и . Microelectron. Reliab., 45 (5-6): 869-874 (2005)