Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Off-state stress degradation mechanism on advanced p-MOSFETs., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Assessment of SiGe quantum well transistors for DRAM peripheral applications., , , , , , , , , and 1 other author(s). ICICDT, page 1-4. IEEE, (2015)Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors., , , , , , , , , and 8 other author(s). ESSDERC, page 190-193. IEEE, (2013)Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation., , , , , , , , and . IRPS, page 1-6. IEEE, (2020)Origins and implications of increased channel hot carrier variability in nFinFETs., , , , , , , , , and 11 other author(s). IRPS, page 3. IEEE, (2015)Impact of fin shape variability on device performance towards 10nm node., , , , , , , , , and 3 other author(s). ICICDT, page 1-4. IEEE, (2015)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET., , , , , , , and . Microelectron. Reliab., (2018)High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories., , , , , , , , , and 12 other author(s). VLSI Technology and Circuits, page 306-307. IEEE, (2022)Integration of a Stacked Contact MOL for Monolithic CFET., , , , , , , , , and 13 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)