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Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.

W. Lau, P. Yang, J. Chian, V. Ho, C. Loh, S. Siah, and L. Chan. Microelectron. Reliab., 49 (1): 1-7 (2009)

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Yang Yang

Other publications of authors with the same name

Perturbing a Neural Network to Infer Effective Connectivity: Evidence from Synthetic EEG Data.P. Yang, X. Shen, Z. Li, Z. Luo, K. Lou, and Q. Liu. CoRR, (2023)Dangoron: Network Construction on Large-scale Time Series Data across Sliding Windows.Y. Xu, P. Yang, and Z. Tao. SIGMOD Conference Companion, page 269-271. ACM, (2023)FedGS: Federated Graph-based Sampling with Arbitrary Client Availability.Z. Wang, X. Fan, J. Qi, H. Jin, P. Yang, S. Shen, and C. Wang. CoRR, (2022)A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering.W. Lau, P. Yang, C. Eng, V. Ho, C. Loh, S. Siah, D. Vigar, and L. Chan. Microelectron. Reliab., 48 (4): 497-503 (2008)An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory.W. Lau, P. Yang, V. Ho, L. Toh, Y. Liu, S. Siah, and L. Chan. Microelectron. Reliab., 48 (10): 1641-1648 (2008)FedAVE: Adaptive data value evaluation framework for collaborative fairness in federated learning.Z. Wang, Z. Peng, X. Fan, Z. Wang, S. Wu, R. Yu, P. Yang, C. Zheng, and C. Wang. Neurocomputing, (March 2024)Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors.W. Lau, P. Yang, E. Lim, Y. Tang, S. Lai, V. Lo, S. Siah, and L. Chan. Microelectron. Reliab., 50 (3): 346-350 (2010)The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.W. Lau, P. Yang, S. Siah, and L. Chan. Microelectron. Reliab., 52 (11): 2847-2850 (2012)Robust Optical and SAR Image Matching Using Attention-Enhanced Structural Features.Y. Ye, C. Yang, G. Gong, P. Yang, D. Quan, and J. Li. IEEE Trans. Geosci. Remote. Sens., (2024)Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.W. Lau, P. Yang, J. Chian, V. Ho, C. Loh, S. Siah, and L. Chan. Microelectron. Reliab., 49 (1): 1-7 (2009)

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Disambiguation of "Yang, Peizhen"

copy delete add this publication to your clipboard
community post
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URL
DOI
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DIN 1505
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Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.

Please choose a person to relate this publication to

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Yang, Peizhen"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.

Please choose a person to relate this publication to

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Other publications of authors with the same name

Disambiguation