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Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2021)Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions., , , , , , , , , and 2 other author(s). ESSDERC, page 255-258. IEEE, (2021)Variability in Fully Depleted MOSFETs., , , , , , and . ICICDT, page 1-3. IEEE, (2012)16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors., , , , , , , , , and 20 other author(s). IMW, page 1-4. IEEE, (2021)High temperature stability embedded ReRAM for 2x nm node and beyond., , , , , , , , , and 9 other author(s). IMW, page 1-4. IEEE, (2022)Compute-In-Place Serial FeRAM: Enhancing Performance, Efficiency and Adaptability in Critical Embedded Systems., , , , , , and . VLSI-SoC, page 1-6. IEEE, (2023)Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)., , , , , , , , , and 4 other author(s). IRPS, page 1-8. IEEE, (2023)1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation., , , , , , , , , and 6 other author(s). MIXDES, page 1-6. IEEE, (2023)Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells., , , , , , , , , and 5 other author(s). ESSDERC, page 168-171. IEEE, (2016)Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2022)