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STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application.

, , , , , , , , , , , , , , , и . IMW, стр. 1-4. IEEE, (2021)

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Boloor Ramananda Rao

Nagaraj Narayan Rao

Ercole Rao

Bharathi Vasudeva Rao

Yadlapalli Venkateswara Rao

 

Другие публикации лиц с тем же именем

Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown., , , , , , , , , и 1 other автор(ы). IRPS, стр. 5-1. IEEE, (2018)Device-Aware Test for Back-Hopping Defects in STT-MRAMs., , , , , , , , и . DATE, стр. 1-6. IEEE, (2023)SOT-MRAM 300mm integration for low power and ultrafast embedded memories., , , , , , , , , и 9 other автор(ы). CoRR, (2018)STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application., , , , , , , , , и 6 other автор(ы). IMW, стр. 1-4. IEEE, (2021)Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs., , , , , , , , , и . ITC, стр. 236-245. IEEE, (2023)SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories., , , , , , , , , и 9 other автор(ы). VLSI Circuits, стр. 81-82. IEEE, (2018)Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM., , , , , , , , , и 7 other автор(ы). VLSI Circuits, стр. 194-. IEEE, (2019)