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Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.

, , , , , , , , , , and . IRPS, page 5-1. IEEE, (2018)

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Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown., , , , , , , , , and 1 other author(s). IRPS, page 5-1. IEEE, (2018)Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM., , , , , , , , , and 7 other author(s). VLSI Circuits, page 194-. IEEE, (2019)Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications., , , , , , , , , and 2 other author(s). DAC, page 13. ACM, (2019)SOT-MRAM 300mm integration for low power and ultrafast embedded memories., , , , , , , , , and 9 other author(s). CoRR, (2018)Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2021)STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2021)Pinhole Defect Characterization and Fault Modeling for STT-MRAM Testing., , , , , , , , and . ETS, page 1-6. IEEE, (2019)Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications., , , , , , , , and . IMW, page 1-4. IEEE, (2023)