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Broadband 240-GHz Radar for Non-Destructive Testing of Composite Materials.

, , , , , , and . IEEE J. Solid State Circuits, 54 (9): 2388-2401 (2019)

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20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon., , , , , , , and . IEEE J. Solid State Circuits, 54 (9): 2411-2418 (2019)Integrated 220-260 GHz Radar Frontend., , , , , and . BCICTS, page 235-238. IEEE, (2018)Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications., , , , , , , , , and 3 other author(s). Future Security, volume 318 of Communications in Computer and Information Science, page 200-211. Springer, (2012)High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology., , , , and . BCICTS, page 156-159. IEEE, (2018)Ultra-Low-Noise 50-nm InGaAs mHEMT Technology and MMICs for Room Temperature and Cryogenic Applications., , , , , , and . IGARSS, page 1115-1118. IEEE, (2023)Multibias scalable HEMT small-signal modeling based on a hybrid direct extraction/particle swarm optimization approach., , and . Microelectron. J., 43 (8): 562-568 (2012)W-band radiometer system with switching front-end for multi-load calibration., , , , , , and . IGARSS, page 3843-3846. IEEE, (2011)A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE., , , , and . IEEE J. Solid State Circuits, 38 (9): 1433-1437 (2003)Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 46 (10): 2193-2202 (2011)Coplanar millimeter-wave ICs for W-band applications using 0.15 μm pseudomorphic MODFETs., , , , , , , , , and . IEEE J. Solid State Circuits, 31 (10): 1426-1434 (1996)