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First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving.

X. Wang, Z. Zheng, Q. Kong, L. Jiao, K. Han, C. Sun, Z. Zhou, L. Liu, Y. Kang, G. Liu, D. Zhang, и X. Gong. VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)

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Zheng-Zheng Kuang

Jiarong Zheng

Xing Zheng

Zheng Ren-Rong

Shuiying Zheng

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