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Multi Level Cell Reliability in Ge-rich GeSbTe-based Phase Change Memory Arrays., , , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)Outils pour calculer l'empreinte TIC des organisations : adaptation d'une étude européenne., , , и . INFORSID, стр. 37-38. (2023)Frequency modulation of conductance level in PCM device for neuromorphic applications., , , , , , , , , и . ESSCIRC, стр. 129-132. IEEE, (2022)Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement., , , , , , , , , и 6 other автор(ы). ESSDERC, стр. 225-228. IEEE, (2022)Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction., , , , , , , , , и 3 other автор(ы). ESSDERC, стр. 233-236. IEEE, (2022)OTS selector devices: Material engineering for switching performance., , , , , , , , и . ICICDT, стр. 113-116. IEEE, (2018)Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance., , , , , , , , , и 7 other автор(ы). IMW, стр. 1-4. IEEE, (2021)Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate., , , , , , , , , и 7 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Tools for Calculating the ICT Footprint of Organisations: Adaptation of a European Study., , , и . EMCIS, том 464 из Lecture Notes in Business Information Processing, стр. 277-290. Springer, (2022)Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks., , , , , , , , , и . ICECS, стр. 561-564. IEEE, (2018)